| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0069 Ω |
| Polarity | N-Channel |
| Power Dissipation | 48.1 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 40 V |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 2400pF @20V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 48.1 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SUD50N04-8M8P-4GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for backlight inverter for LCD display, DC to DC converter and full bridge converter applications.
● Halogen-free according to IEC 61249-2-21 definition
● 100% Rg Tested
● 100% UIS Tested
● PWM Optimised
Vishay Semiconductor
10 Pages / 0.16 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
2 Pages / 0.22 MByte
VISHAY
TO-252-3 N-CH 40V 14A 8.8mΩ
Vishay Siliconix
MOSFET N-CH 40V 14A TO-252
Vishay Semiconductor
MOSFET 40V 50A 48.1W 8.8mohm @ 10V
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