| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0074 Ω |
| Polarity | N-Channel |
| Power Dissipation | 136 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 2650pF @25V(Vds) |
| Input Power (Max) | 136 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ |
| Minimum Packing Quantity | 2000 |
The SUD50N06-09L-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
VISHAY
9 Pages / 0.16 MByte
VISHAY
14 Pages / 0.05 MByte
VISHAY
2 Pages / 0.28 MByte
VISHAY
TO-252-3 N-CH 60V 50A 9mΩ
Vishay Siliconix
Trans MOSFET N-CH 60V 50A 3Pin(2+Tab) DPAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Visay
N-Channel 60V (D-S), 175C MOSFET, Logic Level
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
