| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Polarity | N-Channel, P-Channel |
| Breakdown Voltage (Drain to Source) | ±200 V |
| Continuous Drain Current (Ids) | 2.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
General Description
●The Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
●Features
●► Low threshold
●► Low on resistance
●► Low input capacitance
●► Fast switching speeds
●► Freedom from secondary breakdown
●► Low input and output leakage
●► Independent, electrically isolated N- and P channels
●Applications
●► Medical ultrasound transmitters
●► High voltage pulsers
●► Amplifi ers
●► Buffers
●► Piezoelectric transducer drivers
●► General purpose line drivers
●► Logic level interface
Supertex
4 Pages / 0.45 MByte
Supertex
Enhancement Mode MOSFET Array (includes Low Threshold MOSFET)
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Trans MOSFET N/P-CH 200V 8Pin SOIC N
Supertex
Trans MOSFET N/P-CH 200V 8Pin SOIC N
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N- and P-Channel Enhancement-Mode Dual MOSFET
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