| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 4.50V (min) |
| Operating Voltage | 4.5V ~ 18V |
| Case/Package | PDIP-8 |
| Rise/Fall Time | 25 ns |
| Number of Outputs | 2 Output |
| Output Voltage | 18.0 V |
| Output Current | 1.5 A |
| Supply Current | 4.50 mA |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 0.73 W |
| Rise Time | 40ns (Max) |
| Fall Time | 40ns (Max) |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 35 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 730 mW |
| Supply Voltage | 4.5V ~ 18V |
| Supply Voltage (Max) | 18 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.16 mm |
| Size-Width | 6.6 mm |
| Size-Height | 4.06 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The TC4427AEPA is a 1.5A dual non-inverting high-speed Power MOSFET Driver for pulse transformer drive. The TC4427A device has matched leading and falling edge propagation delay times. The device is highly latch-up resistant under any conditions within their power and voltage ratings. It is not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. It can accept, without damage or logic upset, up to 500mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2kV. The TC4427A MOSFET driver can easily charge/discharge 1000pF gate capacitances in under 30ns. This device provides low enough impedances in both the on and off states to ensure the MOSFET"s intended state will not be affected, even by large transients.
● Matched rise, fall and delay times
● 7R Low output impedance (typical)
● Input withstands negative inputs up to 5V
● 2kV Electrostatic Discharge (ESD) protected
●ESD sensitive device, take proper precaution while handling the device.
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