TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 4.50V (min) |
Case/Package | PDIP-8 |
Rise/Fall Time | 25ns, 33ns |
Number of Outputs | 1 Output |
Supply Current | 4.00 mA |
Number of Positions | 8 Position |
Power Dissipation | 730 mW |
Rise Time | 40 ns |
Fall Time | 50 ns |
Fall Time (Max) | 50 ns |
Fall Time (Max) | 40 ns |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 730 mW |
Supply Voltage | 4.5V ~ 30V |
Supply Voltage (Max) | 30 V |
Supply Voltage (Min) | 4.5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.16 mm |
Size-Width | 6.6 mm |
Size-Height | 4.06 mm |
Operating Temperature | -40℃ ~ 85℃ |
The TC4432EPA is a CMOS high-speed MOSFET Driver for use in high-side driver applications. It will not latch-up under any conditions within its power and voltage ratings. It can accept, without damage or logic upset, up to 300mA of reverse current being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a low state when the input supply voltage drops below 7V. For operation at lower voltages, disable the lockout and start-up circuit by grounding pin 3 (LOCK DIS), for all other situations, pin 3 (LOCK DIS) should be left floating. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETS.
● 1.5A High peak output current
● High capacitive load drive capability - 1000pF in 25nsec
● 7R Low output impedance
● Latch-up protected - Will withstand >300mA reverse current
● 4kV ESD Protected
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