DESCRIPTION
●The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only
●Memory (NAND E2PROM) organized as 528 bytes u32 pages u4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u32 pages).
●x Organization
● Memory cell allay 528 u128K u8
● Register 528 u8
● Page size 528 bytes
● Block size (16K 512) bytes
●x Modes
● Read, Reset, Auto Page Program,
● Auto Block Erase, Status Read,
● Multi Block Program, Multi Block Erase
●x Mode control
● Serial input/output
● Command control
●x Power supply VCC 2.7 V to 3.6 V
●x Program/Erase Cycles 1E5 cycle (with ECC)
●x Access time
● Cell array to register 25 Ps max
● Serial Read Cycle 50 ns min
●x Operating current
● Read (50 ns cycle) 10 mA typ.
● Program (avg.) 10 mA typ.
● Erase (avg.) 10 mA typ.
● Standby 50 PA max.
●x Package
● TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)
