Description:
●DrMOS 4.0 x 4.0 x 1.0 mm³ offers best-in-class efficiency and very low power loss. Infineon can deliver these benefits by combining its latest generation 25V OptiMOS™ 5 MOSFET technologies with its proven MOSFET driver silicon. A significant reduction of switching losses enables superior efficiency at higher switching frequencies. Higher switching frequency operation, combined with an extremely small package, enables system designers to save board space and still deliver superior performance.
●Summary of Features:
● Small 4.0 x 4.0 x 1.0mm³ PQFN package
● Fast switching technology for improved performance at high switching frequency (> 500kHz)
● Recommended input voltage 4.5V to 16V
● Undervoltage lockout › Shoot through protection
● 5V driver voltage optimized
● Compatible with standard 3.3V PWM
●Benefits:
● Peak efficiency > 94%
● Integrated bootstrap diode (no need of external diode)
● Thermal warning
● Remote driver disable function
