2GBIT (256M u 8BITS) CMOS NAND E2PROM
●DESCRIPTION
●The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).
●The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density nonvolatile memory data storage.
●FEATURES
●• Organization
● Memory cell allay 2112 u 64K u 8 u 2
● Register 2112 u 8
● Page size 2112bytes
● Block size (128K 4K) bytes
●• Modes
● Read, Reset, Auto Page Program
● Auto Block Erase, Status Read
●• Mode control
● Serial input㧛output
● Command control
●• Powersupply VCC 2.7 V to 3.6 V
●• Program/Erase Cycles 1E5 Cycles(With ECC)
●• Access time
● Cell array to register 25 μs max
● Serial Read Cycle 50 ns min
●• Operating current
● Read (50 ns cycle) 10 mA typ.
● Program (avg.) 10 mA typ.
● Erase (avg.) 10 mA typ.
● Standby 50 μA max
●• Package
● TSOP I 48-P-1220-0.50(Weight : 0.53 g typ.)
