| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220-3 |
| Power Rating | 2 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 80 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @3A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP102 is a 100V Silicon Epitaxial Base NPN Complementary Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the TIP107
● Integrated anti-parallel collector-emitter diode
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
4 Pages / 0.08 MByte
ST Microelectronics
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ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.16 MByte
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