| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 80 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @3A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Height | 9.4 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP102 is a 100V NPN epitaxial silicon Darlington Transistor for industrial use. It features monolithic construction with built in base-emitter shunt resistors. This product is general usage and suitable for many different applications. The transistor is complementary to TIP105/106/107.
● High DC current gain (hFE=1000 at VCE= 4V, IC = 3A minimum)
● Low collector-emitter saturation voltage
● 100V Collector base voltage (VCBO)
● 5V Emitter base voltage (VEBO)
● 1A Base current (IB)
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