| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -8.00 A |
| Case/Package | TO-220-3 |
| Output Voltage | 100 V |
| Output Current | 8 A |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 80 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Thermal Resistance | 62.5℃/W (RθJA) |
| Continuous Collector Current | 8A |
| hFE Min | 1000 @3A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| Input Voltage | 2.8 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
●PNP Darlington Transistors, ON Semiconductor
●These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.
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