| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN+ PNP |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 2A |
| hFE Min | 1000 @1A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 500 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
The TIP110 is a NPN epitaxial silicon Darlington Transistor offers 60V collector-base voltage and 2A collector current. It is designed as monolithic construction with built-in base-emitter shunt resistors.
● 1000 High DC current gain (hFE) @ VCE = 4V, IC = 1A minimum
● Low collector-emitter saturation voltage
● Complementary to TIP115
ON Semiconductor
8 Pages / 0.13 MByte
ON Semiconductor
24 Pages / 0.56 MByte
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1 Pages / 0.09 MByte
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9 Pages / 0.06 MByte
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