| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -8.00 A |
| Case/Package | TO-220-3 |
| Power Rating | 50 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 1000 @1A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 500 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Height | 9.4 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP110 is a NPN epitaxial silicon Darlington Transistor offers 60V collector-base voltage and 2A collector current. It is designed as monolithic construction with built-in base-emitter shunt resistors.
● 1000 High DC current gain (hFE) @ VCE = 4V, IC = 1A minimum
● Low collector-emitter saturation voltage
● Complementary to TIP115
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