| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 5.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 65 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 1000 @3A, 3V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage.
● Collector to emitter voltage (Vce) is 60V
● Collector current (Ic) is 5A
● Power dissipation (Pd) is 65W
● Collector to emitter saturation voltage of 4V at 5A collector current
● DC current gain (hFE) of 1000
● Operating junction temperature range from 150°C
ST Microelectronics
5 Pages / 0.3 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.16 MByte
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