| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -5.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 65 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 1000 |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP125 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
● Low collector-emitter saturation voltage
ST Microelectronics
5 Pages / 0.3 MByte
ST Microelectronics
14 Pages / 0.58 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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