| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 10.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 125 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 125 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP142 is a NPN complementary Power Darlington Transistor. This device is manufactured in planar technology with base island layout and monolithic Darlington configuration. Exceptional high gain performance coupled with very low saturation voltage.
● Monolithic Darlington Configuration
● Integrated Antiparallel Collector-Emitter Diode
ST Microelectronics
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ST Microelectronics
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ST Microelectronics
16 Pages / 0.12 MByte
ST Microelectronics
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ST Microelectronics
1 Pages / 0.13 MByte
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