| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 10.0 A |
| Case/Package | TO-247-3 |
| Output Voltage | 100 V |
| Output Current | 10 A |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Thermal Resistance | 35.7℃/W (RθJA) |
| Continuous Collector Current | 10A |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 125 W |
| DC Current Gain (hFE) | 500 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| Input Voltage | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 4.9 mm |
| Size-Height | 5.3 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The TIP142G is a 100V NPN complementary silicon Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. It has monolithic construction with built-in base-emitter shunt resistor. The TIP142 (NPN) and TIP147 (PNP) are complementary devices.
● High DC current gain
● 100VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
● 100VDC Collector to base voltage (VCBO)
● 5VDC Emitter to base voltage (VEBO)
● 1°C/W Thermal resistance, junction to case
● 35.7°C/W Thermal resistance, junction to ambient
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