| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 90 W |
| Breakdown Voltage (Collector to Base) | 100 V |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 500 |
| Input Power (Max) | 80 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 90000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
●Features
●■ Monolithic Darlington configuration
●■ Integrated antiparallel collector-emitter diode
●Application
●■ Linear and switching industrial equipment
ST Microelectronics
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