TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -15.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 90 W |
Breakdown Voltage (Collector to Base) | 100 V |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 20 @4A, 4V |
hFE Max | 70 |
Input Power (Max) | 90 W |
DC Current Gain (hFE) | 20 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 90000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 20.15 mm |
Operating Temperature | 150℃ (TJ) |
The TIP2955 is a NPN-PNP complementary Power Transistor manufactured in Epitaxial Base Planar technology. It is suitable for audio, power linear and switching applications.
● Low collector-emitter saturation voltage
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