| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Base) | 100 V |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 10 @3A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP31C is a 100V NPN Epitaxial Silicon Transistor for medium power linear switching. This product is general usage and suitable for many different applications. It is complementary to TIP29/29A/29B/29C.
● 100V Collector to base voltage (VCBO)
● 5V Emitter to base voltage (VEBO)
● 1A Base current (IB)
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