| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -3.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN, PNP, P-Channel |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 10 @3A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP32C is a -100V Silicon Epitaxial Base PNP Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the TIP31C
● Well-controlled hFE parameter for increased reliability
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