TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 25.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 125 W |
Breakdown Voltage (Collector to Base) | 100 V |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 10 @15A, 4V |
Input Power (Max) | 125 W |
DC Current Gain (hFE) | 50 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 125000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 20.15 mm |
Operating Temperature | 150℃ (TJ) |
The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with "base island" layout resulting in exceptional high gain performance coupled with very low saturation voltage and suitable for general purpose linear and switching applications.
● Collector to emitter voltage (Vce) is 100V
● Collector current (Ic) is 25A
● Power dissipation (Pd) is 125W
● Collector to emitter saturation voltage of 4V at 25A collector current
● DC current gain (hFE) of 10 at 15A collector current
● Operating junction temperature range from 150°C
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