TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 6.00 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 65 W |
Gain Bandwidth Product | 3 MHz |
Breakdown Voltage (Collector to Emitter) | 100 V |
Thermal Resistance | 1.67℃/W (RθJC) |
Continuous Collector Current | 6A |
hFE Min | 15 @3A, 4V |
Input Power (Max) | 2 W |
DC Current Gain (hFE) | 3 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.28 mm |
Size-Width | 4.83 mm |
Size-Height | 15.75 mm |
Operating Temperature | -65℃ ~ 150℃ |
●NPN Power Transistors, ON Semiconductor
●These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.
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