TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | 100 mA |
Case/Package | TO-220-3 |
Output Voltage | ≥2.70 V |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 2 W |
Breakdown Voltage (Collector to Emitter) | 40 V |
Thermal Resistance | 1.67℃/W (RθJC) |
Continuous Collector Current | 6A |
hFE Min | 15 @3A, 4V |
Input Power (Max) | 2 W |
DC Current Gain (hFE) | 75 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.28 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
The versatility of this PNP TIP42G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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