| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 2.4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 3A |
| Input Capacitance (Ciss) | 280pF @25V(Vds) |
| Input Power (Max) | 60 W |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
The TK3P50D is a N-channel enhancement-mode Silicon MOSFET suitable for switching voltage regulator applications.
● Low drain-source ON-resistance
● 1S High forward transfer admittance
● 10µA Maximum low leakage current
●Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.
Toshiba
9 Pages / 0.22 MByte
Toshiba
MOSFET N-CH 500V 3A DPAK-3
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