| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.065 Ω |
| Polarity | N-Channel |
| Power Dissipation | 320 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 40A |
| Operating Temperature (Max) | 150 ℃ |
The TK40J60U is a DTMOS II N-channel enhancement-mode Silicon MOSFET suitable for switching voltage regulator applications.
● Low drain-source ON resistance
● High forward transfer admittance
● Low leakage current
● Enhancement-mode
●Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.
Toshiba
2 Pages / 0.19 MByte
Toshiba
Trans MOSFET N-CH 600V 40A 3Pin(3+Tab) TO-3PN T/R
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