| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 250 W |
| Drain to Source Voltage (Vds) | 900 V |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 2000pF @25V(Vds) |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.5 mm |
| Size-Width | 4.5 mm |
| Size-Height | 20 mm |
| Operating Temperature | 150℃ (TJ) |
N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
Toshiba
9 Pages / 0.22 MByte
Toshiba
Trans MOSFET N-CH 900V 9A 3Pin TO-3P(N)
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