TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 16.0 V |
Case/Package | SOIC-8 |
Supply Current | 2.1 mA |
Number of Circuits | 1 Circuit |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Power Dissipation | 710 mW |
Common Mode Rejection Ratio | 80 dB |
Input Offset Drift | 1.20 µV/K |
Bandwidth | 10 MHz |
Slew Rate | 16.0 V/μs |
Gain Bandwidth Product | 10 MHz |
Input Offset Voltage | 390 µV |
Input Bias Current | 1.5 pA |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Gain Bandwidth | 10 MHz |
Power Dissipation (Max) | 710 mW |
Minimum CMRR Range | 80 dB |
Supply Voltage (Max) | 16 V |
Supply Voltage (Min) | 4.5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 5 mm |
Size-Width | 3.91 mm |
Size-Height | 1.5 mm |
Operating Temperature | -40℃ ~ 125℃ |
The TLC071ID is a single wide-bandwidth high-output-drive Operational Amplifier. The BiMOS family concept is simple - provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. Familiar features like offset nulling pins and new features like MSOP PowerPAD. Developed in TI"s patented LBC3 BiCMOS process, the new BiMOS amplifier combine a very high input impedance low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL07x BiFET predecessors include a bandwidth of 10MHz (an increase of 300%) and voltage noise of 7nV/√Hz (an improvement of 60%). DC improvements include a factor of 4 reduction in input offset voltage down to 1.5mV (maximum) in the standard grade and a power supply rejection improvement of greater than 40 to 130dB.
● 1.9mA/channel Supply current
● 125µA/channel Ultralow power shutdown mode
● 60µV Input offset voltage
● 1.2µV/°C Typical offset drift
● 95dB Typical CMRR
● Green product and no Sb/Br
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