TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 16.0 V |
Case/Package | SOIC-8 |
Supply Current | 1.9 mA |
Number of Circuits | 2 Circuit |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Power Dissipation | 0.71 W |
Common Mode Rejection Ratio | 80 dB |
Input Offset Drift | 1.20 µV/K |
Bandwidth | 10 MHz |
Slew Rate | 16.0 V/μs |
Gain Bandwidth Product | 10 MHz |
Input Offset Voltage | 390 µV |
Input Bias Current | 2 pA |
Operating Temperature (Max) | 70 ℃ |
Operating Temperature (Min) | 0 ℃ |
Gain Bandwidth | 10 MHz |
Power Dissipation (Max) | 710 mW |
Minimum CMRR Range | 80 dB |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 4.9 mm |
Size-Width | 3.91 mm |
Size-Height | 1.58 mm |
Operating Temperature | 0℃ ~ 70℃ |
The TLC082CD is a dual wide bandwidth high output drive Operational Amplifier. The first members of TI"s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple - provide an upgrade path for BiFET users who are moving away from dual-supply system and demand higher AC and DC performance. Developed in TI"s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10MHz (an increase of 300%) and voltage noise of 8.5nV/√Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5mV (maximum) in the standard grade and a power supply rejection improvement of greater than 40 to 130dB.
● 1.9mA/channel Supply current
● 125µA/channel Ultralow power shutdown mode
● 60µV Input offset voltage
● 1.2µV/°C Typical offset drift
● 110dB Typical CMRR
● Green product and no Sb/Br
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