TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 30 MHz |
Number of Pins | 28 Pin |
Supply Voltage (DC) | 5.50V (max) |
Case/Package | DIP-28 |
Number of Outputs | 16 Output |
Input Voltage (DC) | 3.00V ~ 5.50V |
Output Voltage | 17 V |
Output Current | 130 mA |
Number of Channels | 16 Channel |
Number of Positions | 28 Position |
Switching Frequency | 30 MHz |
Input Voltage (Max) | 5.5 V |
Input Voltage (Min) | 3 V |
Output Voltage (Max) | 17 V |
Output Current (Max) | 130 mA |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Supply Voltage | 3V ~ 5.5V |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 3 V |
Input Voltage | 3V ~ 5.5V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 35.69 mm |
Size-Width | 6.73 mm |
Size-Height | 4.57 mm |
Operating Temperature | -40℃ ~ 85℃ (TA) |
The TLC5940NT is a 16-channel LED Driver with dot correction and greyscale PWM control. Each channel has an individually adjustable 4096-step greyscale PWM brightness control and a 64-step, constant-current sink (dot correction). The dot correction adjusts the brightness variations between LED channels and other LED drivers. The dot correction data is stored in an integrated EEPROM. Both greyscale control and dot correction are accessible via a serial interface. A single external resistor sets the maximum current value of all 16 channels. The TLC5940 features two error information circuits. The LED open detection (LOD) indicates a broken or disconnected LED at an output terminal. The thermal error flag (TEF) indicates an over-temperature condition.
● 12-bit (4096 steps) Greyscale PWM control
● 6-bit (64 steps) Dot correction
● Serial data interface
● Controlled in-rush current
● 30MHz Data transfer rate
● CMOS level I/O
● LED open detection
● Thermal error flag
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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