TLP351F Datasheet PDF - Toshiba

Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive Industrial Inverter

●The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP351F is suitable for gate driving circuit of IGBT or power MOSFET. Especially TLP351F is capable of “direct” gate drive of lower Power IGBTs.

●Absolute maximum ratings and electrical characteristics are the same as TLP351 technical datasheet.

●•  Peak output current: ±0.6 A (max)

●•  Guaranteed performance over temperature: −40 to 100°C

●•  Supply current: 2 mA (max)

●•  Power supply voltage: 10 to 30 V

●•  Threshold input current : IF= 5 mA (max)

●•  Switching time (tpLH/tpHL) : 700 ns (max)

●•  Common mode transient immunity: 10 kV/μs

●•  Isolation voltage: 3750 Vrms

●•  Construction mechanical rating

●•  Option(D4)

●    VDE Approved : DIN EN60747-5-2

●   Maximum Operating Insulation Voltage : 1140VPK

●   Highest Permissible Over Voltage   : 6000VPK

●   (Note): When an EN60747-5-2 approved type is needed, Please designate “Option(D4)”