TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-23 |
Drain to Source Resistance (on) (Rds) | 10.0 Ω |
Polarity | P-Channel |
Power Dissipation | 350 mW |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 0.185A |
High-Side Switching Low On-Resistance: 6 Ω Low Threshold: –2 V (typ) Fast Swtiching Speed: 20 ns (typ) Low Input Capacitance: 20 pF (typ) Gate-Source ESD Protection
VISHAY
5 Pages / 0.1 MByte
VISHAY
4 Pages / 0.04 MByte
VISHAY
SOT-23-3P-CH 60V 185mA 10Ω
VISHAY
SOT-23-3P-CH 60V 185mA 10Ω
Vishay Siliconix
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Siliconix
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
Vishay Semiconductor
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Supertex
Trans MOSFET P-CH 60V 0.12A 3Pin SOT-23
Vishay Semiconductor
MOSFET 60V -0.185A 350mW 10Ω @ 4.5V
Vishay Siliconix
Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.