| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 20 Pin |
| Supply Voltage (DC) | 30.0 V |
| Case/Package | SOIC-20 |
| Power Rating | 1.5 W |
| Supply Current | 26 mA |
| Number of Channels | 2 Channel |
| Number of Positions | 20 Position |
| Power Dissipation | 2.8 W |
| Common Mode Rejection Ratio | 100 dB |
| Slew Rate | 1.30 kV/μs |
| Output Power | 1.5 W |
| Input Offset Voltage | 5 mV |
| Output Current (Max) | 1400 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2800 mW |
| Minimum CMRR Range | 100 dB |
| Supply Voltage (Max) | 30 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 85℃ |
The TPA6120A2DWPG4 is a High Fidelity Stereo Headphone Amplifier for applications requiring a high-power output. The TPA6120A2"s current-feedback AB amplifier architecture delivers high bandwidth, extremely low noise and up to 128dB of dynamic range. Three key features make current-feedback amplifiers outstanding for audio. The first feature is the high slew rate that prevents odd order distortion anomalies. The second feature is current-on-demand at the output that enables the amplifier to respond quickly and linearly when necessary without risk of output distortion. When large amounts of output power are suddenly needed, the amplifier can respond extremely quickly without raising the noise floor of the system and degrading the signal-to-noise ratio. The third feature is the gain-independent frequency response that allows the full bandwidth of the amplifier to be used over a wide range of gain settings.
● 128dB SNR (A-weighted)
● 112.5dB THD
● Current-feedback architecture
● 0.9µVrms Output voltage noise at gain = 1V/V (16R Load)
● 1300V/µs Slew rate
● Can be configured for single ended or differential inputs
● Independent power supplies for low crosstalk
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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