TPC8212 Datasheet PDF - Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) 

●High-Efficiency DC/DC Converter Applications 

●Notebook PC Applications 

●Portable-Equipment Applications 

●• Small footprint due to small and thin package 

●• High-speed switching 

●• Small gate charge: QSW = 5.5 nC (typ.) 

●• Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) 

●• High forward transfer admittance: |Yfs| =14 S (typ.) 

●• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) 

●• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)