TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package (SI) | 3216 |
Case/Package | SOT-23-8 |
Polarity | N+P |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 4A |
Input Capacitance (Ciss) | 470pF @10V(Vds) |
Input Power (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Size-Length | 3.2 mm |
Size-Width | 1.6 mm |
Operating Temperature | 150℃ (TJ) |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) • Enhancement-mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Toshiba
11 Pages / 0.31 MByte
Toshiba
11 Pages / 0.31 MByte
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