| TYPE | DESCRIPTION |
|---|
| Case/Package | PS-8 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 5.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) -Portable Equipment Applications -Motor Drive Applications -DC/DC Converters • Lead (Pb)-free • Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) • Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA)
Toshiba
7 Pages / 0.23 MByte
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