TPCP8901 Datasheet PDF - Toshiba

Features • TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 70 ns (typ.) : NPN tf = 85 ns (typ.) • Portable Equipment Applications • Switching Applications