| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Supply Voltage (DC) | 2.50V (max) |
| Operating Voltage | 3.6 V |
| Capacitance | 0.8 pF |
| Case/Package | SOT-3 |
| Breakdown Voltage | 4.5 V |
| Number of Channels | 2 Channel |
| Number of Positions | 3 Position |
| Power Dissipation | 45 W |
| Data Rate | 6.00 Gbps |
| Clamping Voltage | 8 V |
| Test Current | 1 mA |
| Peak Pulse Power | 45 W |
| Min Breakdown Voltage | 4.5 V |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage (Max) | 2.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.05 mm |
| Size-Width | 0.85 mm |
| Size-Height | 0.45 mm |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
The TPD2EUSB30ADRTR is a two-channel ESD/Surge Solution for high speed and low voltage interface. It is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (contact). It also offers 5A (8/20µs) peak pulse current ratings per IEC 61000-4-5 (surge) specification. It also offers low 4.5V DC break-down voltage. The low capacitance, low break-down voltage and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
● Supports USB 3.0 data rates (5Gbps)
● IEC 61000-4-2 ESD Protection (level 4 contact)
● IEC 61000-4-5 Surge protection
● Low capacitance
● 0.6R Typical dynamic resistance
● Flow-through pin mapping
● Green product and no Sb/Br
●Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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