TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 5.50V (max) |
Case/Package | SOIC-8 |
Number of Outputs | 1 Output |
Input Voltage (DC) | 5.50 V |
Output Voltage | ≤5.80 V |
Output Current | 2 A |
Number of Positions | 8 Position |
Power Dissipation | 725 mW |
Rise Time | 8600 µs |
Input Voltage (Max) | 5.5 V |
Input Voltage (Min) | 2.7 V |
Output Voltage (Max) | 5.8 V |
Output Current (Max) | 2 A |
Fall Time | 3400 µs |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 725 mW |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 2.7 V |
Input Voltage | 5.5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 4.9 mm |
Size-Width | 3.91 mm |
Size-Height | 1.58 mm |
Operating Temperature | -40℃ ~ 85℃ |
The TPS2034D is a Power Distribution Switch intended for applications where heavy capacitive loads and short circuits are likely to be encountered. This device is 50mR N-channel MOSFET high-side power switches. The switch is controlled by a logic enable compatible with 5V and 3V logic. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7V. When the output load exceeds the current-limit threshold or a short is present, the TPS203x limits the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage.
● Short-circuit and thermal protection
● Overcurrent logic output
● Logic-level enable input
● 6.1ms Typical rise time
● Undervoltage lockout
● 10µA Maximum standby supply current
● No drain-source back-gate diode
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