| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 250 kHz |
| Number of Pins | 5 Pin |
| Supply Voltage (DC) | 5.50V (max) |
| Case/Package | SOT-23-5 |
| Number of Outputs | 1 Output |
| Output Voltage | -5.25 V, 5.50 V (max) |
| Output Current | 60 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 5 Position |
| Power Dissipation | 0.437 W |
| Quiescent Current | 400 µA |
| Number of Regulated Outputs | 1 Output |
| Output Power | 437 mW |
| Switching Frequency | 250 kHz |
| Input Voltage (Max) | 5.25 V |
| Input Voltage (Min) | 1.6 V |
| Output Current (Max) | 60 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 437 mW |
| Supply Voltage | 1.6V ~ 5.5V |
| Input Voltage | 1.8V ~ 5.25V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.6 mm |
| Size-Height | 1.15 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The TPS60403DBVT is a 60mA Charge Pump Voltage Inverter with fixed 250kHz operation, generates an unregulated negative output voltage from an input voltage ranging from 1.6 to 5.5V. The device is typically supplied by a preregulated supply rail of 5 or 3.3V. Due to its wide input voltage range, two or three NiCd, NiMH or alkaline battery cells, as well as one Li-Ion cell can also power them. Only three external 1µF capacitors are required to build a complete DC-DC charge pump inverter. Additional board area and component count reduction is achieved by replacing the Schottky diode that is typically needed for start-up into load by integrated circuitry. The TPS60403DBVT can deliver a maximum output current of 60mA with a typical conversion efficiency of greater than 90% over a wide output current range.
● Inverts input supply voltage
● Only three small 1µF ceramic capacitors needed
● 65µA Typical device quiescent current
● Integrated active Schottky-diode for start-up into load
● Green product and no Sb/Br
●Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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