| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Supply Voltage (DC) | 1.60 V |
| Voltage Rating (DC) | 5.00 V |
| Case/Package | T-1 |
| Rise/Fall Time | 0.8 µs |
| Number of Positions | 2 Position |
| Forward Voltage | 1.35 V |
| Wavelength | 940 nm |
| Viewing Angle | 17° |
| Peak Wavelength | 940 nm |
| Power Dissipation | 160 mW |
| Rise Time | 800 ns |
| Test Current | 100 mA |
| Forward Current | 100 mA |
| Maximum Forward Voltage (Max) | 1.6 V |
| Forward Current (Max) | 100 mA |
| Fall Time | 800 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 5.8 mm |
| Size-Width | 5.8 mm |
| Size-Height | 8.7 mm |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
The TSAL6200 is a 940nm Infrared Emitting Diode in GaAlAs Multi Quantum Well (MQW) technology with high radiant power and high speed.
● High Reliability
● High Radiant Power
● High Radiant Intensity
● Low Forward Voltage
● Suitable for High Pulse Current Operation
● Good Spectral Matching with Si Photodetectors
● Halogen-free
Vishay Semiconductor
5 Pages / 0.09 MByte
Vishay Semiconductor
15 Pages / 0.94 MByte
Vishay Semiconductor
3 Pages / 0.16 MByte
Vishay Semiconductor
1 Pages / 0.16 MByte
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