TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Voltage Rating (DC) | 1.20 V |
Operating Voltage | 1.3V ~ 1.5V |
Case/Package | SMD |
Rise/Fall Time | 0.8 µs |
Number of Positions | 2 Position |
Forward Voltage | 1.2 V |
Wavelength | 940 nm |
Viewing Angle | 24° |
Peak Wavelength | 950 nm |
Power Dissipation | 190 W |
Rise Time | 800 ns |
Test Current | 20 mA |
Forward Current | 20 mA |
Maximum Forward Voltage (Max) | 1.2 V |
Forward Current (Max) | 100 mA |
Fall Time | 800 ns |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 190 mW |
Supply Voltage | 1.2 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Height | 2.7 mm |
Operating Temperature | -40℃ ~ 85℃ |
The TSML1000 is a 940nm Infrared Emitting Diode in GaAlAs multi quantum well (MQW) technology. It is moulded in a clear, untinted plastic package (with lens) for surface mounting (SMD). It is suitable for use in remote control, punched tape readers, encoder and photointerrupters.
● High speed
● High radiant power
● High radiant intensity
● ϕ = ±12° Angle of half intensity
● Low forward voltage
● Suitable for high pulse current operation
● Good spectral matching with Si photodetectors
● Versatile terminal configurations
VISHAY
9 Pages / 0.18 MByte
VISHAY
10 Pages / 0.28 MByte
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