| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 1.30 V |
| Case/Package | T-1 |
| Pin Pitch | 2.54 mm |
| Number of Positions | 2 Position |
| Forward Voltage | 1.7 V |
| Wavelength | 950 nm |
| Viewing Angle | 30° |
| Peak Wavelength | 950 nm |
| Power Dissipation | 210 W |
| Rise Time | 800 ns |
| Test Current | 100 mA |
| Forward Current | 150 mA |
| Maximum Forward Voltage (Max) | 1.3 V |
| Forward Current (Max) | 150 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 210 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Color | Infrared |
| Size-Height | 8.7 mm |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
The TSUS5202 is a 950nm Infrared Emitting Diode in GaAs technology moulded in a blue-grey tinted plastic package. It is suitable for use with infrared remote control and free air transmission systems with low forward voltage and small package requirements. It is suitable for use in infrared remote control and free air transmission systems with low forward voltage and small package requirements, emitter in transmissive sensors and emitter in reflective sensors.
● High reliability
● ϕ = ±15° Angle of half intensity
● Low forward voltage
● Suitable for high pulse current operation
● Good spectral matching with Si photodetectors
VISHAY
5 Pages / 0.1 MByte
VISHAY
8 Pages / 0.11 MByte
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