| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
● Collector to emitter voltage (Vce) is -230V
● Collector current (Ic) is -15A
● Power dissipation (Pd) is 150W
● Collector to emitter saturation voltage of -3V at -8A collector current
● DC current gain (hFE) of 80 at -1A collector current
● Operating junction temperature range from 150°C
Toshiba
5 Pages / 0.18 MByte
Toshiba
2 Pages / 0.03 MByte
Toshiba
5 Pages / 0.18 MByte
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