| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Polarity | NPN |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| hFE Min | 80 @1A, 5V |
| hFE Max | 160 |
| Input Power (Max) | 150 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 20.5 mm |
| Size-Width | 5.2 mm |
| Size-Height | 26 mm |
| Operating Temperature | 150℃ (TJ) |
The versatility of this NPN TTC5200(Q) GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.
Toshiba
6 Pages / 0.18 MByte
Toshiba
5 Pages / 0.18 MByte
Toshiba
8 Pages / 0.4 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
