Description
●The UCC2720x-Q1 family of high-frequency N channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half bridge, full-bridge, two-switch forward, and active clamp forward converters. The low-side and the high side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.
●An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
●Features
●• Qualified for Automotive Applications
●• AEC-Q100 Qualified With the Following Results:
● – Device Temperature Grade 1:
● – 40°C to 125°C Ambient Operating Temperature Range
● – Device HBM ESD Classification Level 2
● – Device CDM ESD Classification Level C5
●• Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
●• Maximum Boot Voltage: 120 V
●• Maximum VDD Voltage: 20 V
●• On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
●• Greater than 1 MHz of Operation
●• 20-ns Propagation Delay Times
●• 3-A Sink, 3-A Source Output Currents
●• 8-ns Rise and 7-ns Fall Time With 1000-pF Load
●• 1-ns Delay Matching
●• Specified from –40°C to 140°C (Junction Temperature)
●Applications
●• Power Supplies for Telecom, Datacom, and Merchant Markets
●• Half-Bridge Applications and Full-Bridge Converters
●• Isolated Bus Architecture
●• Two-Switch Forward Converters
●• Active-Clamp Forward Converters
●• High-Voltage Synchronous-Buck Converters
●• Class-D Audio Amplifiers
