| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 1 MHz |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 15.0V (max) |
| Case/Package | SOIC-8 |
| Number of Outputs | 2 Output |
| Input Voltage (DC) | 10.0 V |
| Output Voltage | 500 mV |
| Output Current | 100 mA |
| Supply Current | 2 mA |
| Number of Positions | 8 Position |
| Power Dissipation | 650 mW |
| Number of Regulated Outputs | 2 Output |
| Rise Time | 25 ns |
| Switching Frequency | 1000 kHz |
| Topology | Full-Bridge, Half-Bridge, Push-Pull |
| Duty Cycle | 50 % |
| Output Current (Max) | 1 A |
| Maximum Duty Cycle | 50 % |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | 0 ℃ |
| Power Dissipation (Max) | 650 mW |
| Supply Voltage | 4.1V ~ 15V |
| Supply Voltage (Max) | 15 V |
| Supply Voltage (Min) | 10 V |
| Input Voltage | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 4.9 mm |
| Size-Width | 3.91 mm |
| Size-Height | 1.58 mm |
| Operating Temperature | 0℃ ~ 70℃ |
The UCC3808D-2 is a low power current-mode BiCMOS Push-pull Pulse Width Modulation (PWM) Controller contains all of the control and drive circuitry required for offline or DC to DC fixed frequency current-mode switching power supplies with minimal external parts count. The UCCx808-x dual output drive stages are arranged in a push-pull configuration. Both outputs switch at half the oscillator frequency using a toggle flip-flop. The dead time between the two outputs is typically 60 to 200ns depending on the values of the timing capacitor and resistors, thus limiting each output stage duty cycle to less than 50%.
● Internal soft-start
● On-chip error amplifier with 2MHz Gain bandwidth
● On-chip VDD Clamping
● Output drive stages capable of 500mA Peak
● High-speed
● Low-power
● Green product and no Sb/Br
●Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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