| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220 |
| Drain to Source Voltage (Vds) | 500 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
DESCRIPTION
●The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
●FEATURES
● Low RDS(ON)=0.85Ω
● Single Pulse Avalanche Energy Rated
● Rugged - SOA is Power Dissipation Limited
● Fast Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
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