TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Current Rating | 30.0 mA |
Case/Package | SOT-363-6 |
Power Rating | 0.15 W |
Number of Channels | 2 Channel |
Polarity | NPN, PNP |
Power Dissipation | 150 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
hFE Min | 68 @5mA, 5V |
Input Power (Max) | 150 mW |
DC Current Gain (hFE) | 68 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Gain Bandwidth | 250 MHz |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 0.9 mm |
Operating Temperature | -55℃ ~ 150℃ |
The UMD12NTR is a PNP-NPN dual digital Bipolar Transistor with built-in resistors. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
● Ultra-compact complex digital transistor
● Potential divider type
● Small surface-mount package
ROHM Semiconductor
10 Pages / 0.12 MByte
ROHM Semiconductor
9 Pages / 0.53 MByte
ROHM Semiconductor
1 Pages / 0.12 MByte
ROHM Semiconductor
ROHM UMD12NTR Bipolar Transistor Array, NPN, PNP, 50V, 150mW, 100mA, 68 hFE, SOT-363
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