TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Case/Package | SMD-2 |
Number of Channels | 1 Channel |
Number of Positions | 2 Position |
Wavelength | 860 nm |
Viewing Angle | 15° |
Peak Wavelength | 860 nm |
Polarity | NPN |
Power Dissipation | 100 mW |
Power Consumption | 100 mW |
Breakdown Voltage (Collector to Emitter) | 20 V |
Input Power (Max) | 100 mW |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Material | Silicon |
Size-Length | 2.3 mm |
Size-Width | 2.3 mm |
Size-Height | 2.77 mm |
Operating Temperature | -40℃ ~ 100℃ (TA) |
The VEMT2020X01 is a Silicon NPN Epitaxial Planar Phototransistor with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 to 950nm IR emitters.
● Surface mount
● AEC-Q101 qualified
● High radiant sensitivity
● Daylight blocking filter matched with 830 to 950nm IR emitters
● Fast response time
● ϕ = ±15° Angle of half sensitivity
● Package matched with IR emitter series VSMB2000X01
● 4 Weeks floor life, MSL 2a, according to J-STD-020
● Lead (Pb)-free reflow soldering
Vishay Semiconductor
8 Pages / 0.12 MByte
Vishay Semiconductor
8 Pages / 0.13 MByte
Vishay Semiconductor
VISHAY VEMT2020X01 Phototransistor, 860nm, 15°, 0.1W(1/10W), 2Pins
VISHAY
Phototransistor, 860nm, 15°, 0.1W(1/10W), 2Pins
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